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| SI4719CY Vishay Siliconix Battery Disconnect Switch FEATURES D Solution for Bi-Directional Blocking Bi-Directional Conduction Switch D 6- to 30-V Operation D Ground Referenced Logic Level Inputs D Integrated Low rDS(on) MOSFET D Level-Shifted Gate Drive with Internal MOSFET D Two Independent Inputs D Includes Precision Voltage Circuitry D Ultra Low Power Consumption in Off State (Leakage Current Only) D Logic Supply Voltage is Not Required DESCRIPTION The SI4719CY is two level-shifted p-channel MOSFETs. Operating together, these MOSFETs can be used as a reverse blocking switch for battery disconnect applications. It is a solution for multiple battery technology designs or designs that require isolation from the power bus during charging. The SI4719CY is available in a 16-pin SOIC package and is rated for the commercial temperature range of -25 to 85_C. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION IN1 5 9, 10, 11 D1 ESD Logic and Gate Drive Level Shift GND1 12 G1 6 VGS Limiter Half a circuit shown here. 7, 8 S1 Document Number: 70669 S-59510--Rev. B, 31-Aug-98 www.vishay.com S FaxBack 408-970-5600 2-1 SI4719CY Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Voltage Referenced to GND VS, VDa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to 32 V VSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to 30 V VIN1, VIN2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to 15 V VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationb (t = 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4 W (t = steady state) . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W Notes a. VSD 30 VDC b. Device mounted with all leads soldered to 1" x 1" FR4 with laminated copper PC board. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V to 30 V VIN1, VIN2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 13.2 V IDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 A to 6 A Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 to 85_C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 to 150_C SPECIFICATIONS Limits Parameter P Symbol S bl Specific T S ifi Test Conditions C di i Tempa Minb Typc Maxb Unit On-Resistance Leakage Current rDS IDS(off) IS GND(off) IS GND(on) VINL VINH IINH IN to t D or S tON(IN) tOFF(IN) tBBM tRISE tFALL VGS VSD VS = 10 V, ID = 1 A, VIN = H VDS = 10 V Room Room Room 0.028 0.040 1 1 W Power Consumption VS = 21 V Room VS = 10 V and VS = 21 V VIN = 5.0 V VS = 10 V, RL = 5 W, Test Circuit 1 Full Full Room Room Room Room Room Room VS = 30 V ID = -1 A Room Room 2.2 4.5 25 2.9 1.15 1.15 0,73 24 10.2 1.4 50 18 1.1 50 10 2 1.0 10 3.3 mA A Input Voltage Low Input Voltage High Input Current Turn-On Delay Turn-Off Delay Break-Before-Maked Rise Time Fall Time Voltage Across Pin 6 and 7 Forward Diode V mA ms ns V Notes a. Room = 25_C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70669 S-59510--Rev. B, 31-Aug-98 SI4719CY Vishay Siliconix TIMING DIAGRAMS 10 V SOURCE VIN 0V 50% 50% DRAIN VD 5W tON(IN) 90% 10% tOFF(IN) tr 90% 10% tf TEST CIRCUIT 1 PIN CONFIGURATION SO-16 D2 D2 D2 GND2 IN1 G1(OUT) S1 S1 1 2 3 4 5 6 7 8 Top View Order Number: SI4719CY 16 15 14 13 12 11 10 9 S2 S2 G2(OUT) IN2 GND1 D1 D1 D1 TRUTH TABLE VIN1 0 0 1 1 VIN2 0 1 0 1 Switch 1 Off Off On On Switch 2 Off On Off On PIN DESCRIPTION Pin Number 1, 2, 3 4, 12 5 6 7, 8 9, 10, 11 13 14 15, 16 Document Number: 70669 S-59510--Rev. B, 31-Aug-98 Symbol D2 GND IN1 G1(OUT) S1 D1 IN2 G2(OUT) S2 Drain connection for MOSFET-2. Ground Logic input, IN1. High level turns on the switch. Gate output to MOSFET-1. Source connection for MOSFET-1 Drain connection for MOSFET-1. Logic input, IN2. High level turns on the switch. Gate output to MOSFET-2. Source connection for MOSFET-2. Description www.vishay.com S FaxBack 408-970-5600 2-3 SI4719CY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.050 r DS(on) - Drain-Source On-Resistance ( W ) r DS(on) - Drain-Source On-Resistance ( W ) 0.10 On-Resistance vs. Source Voltage 0.040 VS = 10 V 0.030 0.08 0.06 0.020 0.04 IS = 1 A 0.02 0.010 0.000 0 1 2 3 IS (A) 4 5 6 0 0 3 6 9 VS (V) 12 15 18 21 Normalized On-Resistance vs. Junction Temperature 1.8 1.6 r DS(on) - On-Resistance ( W ) (Normalized) 1.4 C OSS (pF) 1.2 1.0 0.8 0.6 0.4 -50 0 -25 0 25 50 75 100 125 150 0 VS = 10 V IS = 1 A 900 1200 Output Capacitance vs. Source Voltage 600 VIN = 0 V 300 5 10 15 VS (V) 20 25 30 TJ - Junction Temperature (_C) 10.000 Off-Supply Current vs. Source Voltage 10.000 On-Supply Current vs. Source Voltage TJ = 150_C TJ = 150_C 1.000 1.000 TJ = 25_C I S ( mA) 0.100 I S ( mA) TJ = 25_C 5 10 15 VS (V) 20 25 30 0.100 0.010 0.010 0.001 0 0.001 0 5 10 15 VS (V) 20 25 30 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70669 S-59510--Rev. B, 31-Aug-98 SI4719CY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Drain-Source Diode Forward Voltage 10 4.30 Input Voltage Trip Point vs. Temperature 4.25 VS = 21 V I S - Source Current (A) TJ = 150_C V IN Trip Point 4.20 VS = 10 V 4.15 TJ = 25_C 4.10 4.05 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 4.0 -50 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) TA = Ambient Temperature (_C) Turn-On Delay vs. Temperature 4.0 1.6 Turn-off Delay vs. Temperature VS = 10 V Rl = 5 W 1.4 VS = 10 V Rl = 5 W 3.6 t d(on) (ms) 2.8 t d(on) (ms) -25 0 25 50 75 100 125 150 3.2 1.2 1.0 2.4 0.8 2.0 -50 0.6 -50 -25 0 25 50 75 100 125 150 Temperature (_C) Temperature (_C) Rise Time vs. Temperature 1.0 32 Fall Time vs. Temperature VS = 10 V Rl = 5 W 0.9 VS = 10 V Rl = 5 W 30 28 0.8 t rise (ms) t fall (ns) -25 0 25 50 75 100 125 150 26 0.7 24 22 0.6 20 0.5 -50 18 -50 -25 0 25 50 75 100 125 150 Temperature (_C) Temperature (_C) Document Number: 70669 S-59510--Rev. B, 31-Aug-98 www.vishay.com S FaxBack 408-970-5600 2-5 SI4719CY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 40 30 Power (W) 20 10 0 0.01 0.1 1 Time (sec) 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 2. Per Unit Base = RthJA = 83.3_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70669 S-59510--Rev. B, 31-Aug-98 SI4719CY Vishay Siliconix APPLICATION DRAWINGS SI4719CY Si4435DY D1 S1 Battery 1 G1 Logic In 1 Drive Si4435DY D2 Battery 2 G2 S2 DC/DC Logic In 2 Drive FIGURE 1 S1 G1 S2 G2 SI4719CY Drive Drive D1 Battery 2 Logic In D2 DC/DC S1 G1 S2 G2 SI4719CY Drive Drive D1 Battery 1 Logic In D2 FIGURE 2 Document Number: 70669 S-59510--Rev. B, 31-Aug-98 www.vishay.com S FaxBack 408-970-5600 2-7 SI4719CY Vishay Siliconix APPLICATION DRAWINGS 1/2 Si4719 AC/DC 1/2 Si4719 Charger Display Power 7 - 30 V 3 - 5 Cell Li-Ion Logic In Drive Logic In Drive DC/DC 5V 3.3 V FIGURE 3: Low-Cost Laptop PC 1/2 Si4719 1/2 Si4719 Display Power AC/DC Charger Logic In Drive Logic In Drive DC/DC 5V 3.3 V 7 - 30 V 3 - 5 Cell Li-Ion 1/2 Si4719 1/2 Si4719 Si6415 Logic In Drive Logic In Drive 7 - 30 V 3 - 5 Cell Li-Ion 1/2 Si4719 1/2 Si4719 Si6415 Logic In Drive Logic In Drive FIGURE 4: High-Performance Laptop PC www.vishay.com S FaxBack 408-970-5600 2-8 Document Number: 70669 S-59510--Rev. B, 31-Aug-98 |
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